IRF7805PbF Datasheet - International Rectifier

IRF7805PbF HEXFET Chip-Set for DC-DC Converters

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. Th.

IRF7805PbF Features

* VDS RDS(on) Qg Qsw Qoss IRF7805PbF 30V 11mΩ 31nC 11.5nC 36nC Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain-to-Source Voltage Gate-to-Source Voltage eContinuous Drain Current, VGS @ 10V eContinuous Drain Current, VGS @ 10V cPulsed

IRF7805PbF-InternationalRectifier.pdf