Datasheet Details
- Part number
- IRF7807
- Manufacturer
- International Rectifier
- File Size
- 239.99 KB
- Datasheet
- IRF7807_InternationalRectifier.pdf
- Description
- N-Channel Power MOSFET
IRF7807 Description
PD * 91747C IRF7807/IRF7807A HEXFET® Chip-Set for DC-DC Converters * * * * N Channel Application Specific MOS.
These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.
IRF7807 Features
* IRF7807 IRF7807A Vds 30V 30V Rds(on) 25mΩ 25mΩ Qg 17nC 17nC Qsw 5.2nC Qoss 16.8nC 16.8nC
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation 25°C 70°C Junction & Storage Temperature Range
IRF7807 Applications
* This has been demonstrated with the 3.3V and 5V converters. (Fig 3 and Fig 4). In these applications the same MOSFET IRF7807 was used for both the control FET (Q1) and the synchronous FET (Q2). This provides a highly effective cost/performance solution. the MOSFET on, resulting in shoot-through cur
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