IRF7807D1PBF

HEXFET Power MOSFET

International Rectifier

IRF7807D1PBF Features

* (Max Values) IRF7807D1 VDS RDS(on) Qg Qsw Qoss 30V 25mΩ 14nC 5.2nC 18.4nC Junction & Storage Temperature Range RθJA www.irf.com 1 5/5/04 IRF7807D1PbF Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage

* Static Drain-Source on Resistance

* Drain-Source Leakage Current

IRF7807D1PBF General Description

The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon are.

IRF7807D1PBF Datasheet (171.05 KB)

IRF7807D1PBF Datasheet Preview — Preview of IRF7807D1PBF PDF

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Part number:

IRF7807D1PBF

Manufacturer:

International Rectifier

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171.05 KB

Description:

Hexfet power mosfet.
PD- 95208 IRF7807D1PbF FETKY MOSFET / SCHOTTKY DIODE

* Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode

* Ideal for Synchro.

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IRF7807D1PBF HEXFET Power MOSFET International Rectifier

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IRF7807D1PBF Features

IRF7807D1PBF General Description

Datasheet Details

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