IRF7807D2PbF Datasheet, Diode, International Rectifier

IRF7807D2PbF Features

• Diode (Max Values) VDS RDS(on) Qg QSW Qoss IRF7807D2 30V 25mΩ 14nC 5.2nC 21.6nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source

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IRF7807D2PbF

Manufacturer:

International Rectifier

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📄 Datasheet

Description:

Mosfet / schottky diode. The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for s

IRF7807D2PbF Application

• Applications HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this te

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IRF7807D2PbF

International Rectifier

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