IRF7807D2PbF

MOSFET / SCHOTTKY DIODE

International Rectifier

IRF7807D2PbF Features

* (Max Values) VDS RDS(on) Qg QSW Qoss IRF7807D2 30V 25mΩ 14nC 5.2nC 21.6nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source 25°C Current (VGS ≥ 4.5V) Pulsed Drain Current 70°C Power Dissipation 25°C 70°C Schottky and Body Diode 25°

IRF7807D2PbF General Description

The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar.

IRF7807D2PbF Datasheet (103.89 KB)

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Part number:

IRF7807D2PbF

Manufacturer:

International Rectifier

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103.89 KB

Description:

Mosfet / schottky diode.
PD- 95436A IRF7807D2PbF

* Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode

* Ideal for Synchronous Rectifiers in DC-DC Conve.

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IRF7807D2PbF MOSFET SCHOTTKY DIODE International Rectifier

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IRF7807D2PbF Features

IRF7807D2PbF General Description

Datasheet Details

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