Datasheet Specifications
- Part number
- IRF7807D2PbF
- Manufacturer
- International Rectifier
- File Size
- 103.89 KB
- Datasheet
- IRF7807D2PbF-InternationalRectifier.pdf
- Description
- MOSFET / SCHOTTKY DIODE
Description
PD- 95436A IRF7807D2PbF * Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode * Ideal for Synchronous Rectifiers in DC-DC Conve.
Features
* (Max Values) VDS RDS(on) Qg QSW Qoss IRF7807D2 30V 25mΩ 14nC 5.2nC 21.6nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source 25°C Current (VGS ≥ 4.5V) Pulsed Drain Current 70°C Power Dissipation 25°C 70°C Schottky and Body Diode 25°Applications
* HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portableIRF7807D2PbF Distributors
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