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IRF7807D2PbF - MOSFET / SCHOTTKY DIODE

IRF7807D2PbF Description

PD- 95436A IRF7807D2PbF * Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode * Ideal for Synchronous Rectifiers in DC-DC Conve.
The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulato.

IRF7807D2PbF Features

* (Max Values) VDS RDS(on) Qg QSW Qoss IRF7807D2 30V 25mΩ 14nC 5.2nC 21.6nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source 25°C Current (VGS ≥ 4.5V) Pulsed Drain Current 70°C Power Dissipation 25°C 70°C Schottky and Body Diode 25°

IRF7807D2PbF Applications

* HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable

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MOSFET SCHOTTKY DIODE International Rectifier
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