IRF7807D2PbF Datasheet - International Rectifier

IRF7807D2PbF MOSFET / SCHOTTKY DIODE

The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar.

IRF7807D2PbF Features

* (Max Values) VDS RDS(on) Qg QSW Qoss IRF7807D2 30V 25mΩ 14nC 5.2nC 21.6nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source 25°C Current (VGS ≥ 4.5V) Pulsed Drain Current 70°C Power Dissipation 25°C 70°C Schottky and Body Diode 25°

IRF7807D2PbF-InternationalRectifier.pdf