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IRF7807D1 MOSFET

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Description

PD- 93761 IRF7807D1 FETKY™ MOSFET / SCHOTTKY DIODE * Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode * Ideal for Synchronou.
The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator.

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Features

* (Max Values) IRF7807D1 VDS RDS(on) Qg Qsw Qoss 30V 25mΩ 14nC 5.2nC 18.4nC Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient
* RθJA Max. 50 Units °C/W www. irf. com 1 11/8/99 IRF7807D1 Electrical Characteristics Parameter Drain-to-Source Breakdown

Applications

* HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable

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IRF7807D1 MOSFET International Rectifier
International Rectifier IRF7807D1-like datasheet
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