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IRF7807D1 - MOSFET

Datasheet Summary

Description

The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.

Features

  • (Max Values) IRF7807D1 VDS RDS(on) Qg Qsw Qoss 30V 25mΩ 14nC 5.2nC 18.4nC Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient.
  • RθJA Max. 50 Units °C/W www. irf. com 1 11/8/99 IRF7807D1 Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage.
  • Static Drain-Source on Resistance.
  • Drain-Source Leakage Current.
  • V(BR)DSS RDS(on) 1.0 90 7.2 Min 30 Typ Max Units V Conditions VGS = 0V, ID = 250µA VGS = 4.5V, ID = 7A‚ VDS.

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Full PDF Text Transcription

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PD- 93761 IRF7807D1 FETKY™ MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier Description The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
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