IRF7807A Datasheet - International Rectifier

IRF7807A, N-Channel Power MOSFET

PD * 91747C IRF7807/IRF7807A HEXFET® Chip-Set for DC-DC Converters * * * * N Channel Application Specific MOS.
These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

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IRF7807A_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF7807A

Manufacturer:

International Rectifier

File Size:

239.99 KB

Description:

N-Channel Power MOSFET

Features

* IRF7807 IRF7807A Vds 30V 30V Rds(on) 25mΩ 25mΩ Qg 17nC 17nC Qsw 5.2nC Qoss 16.8nC 16.8nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation 25°C 70°C Junction & Storage Temperature Range

Applications

* This has been demonstrated with the 3.3V and 5V converters. (Fig 3 and Fig 4). In these applications the same MOSFET IRF7807 was used for both the control FET (Q1) and the synchronous FET (Q2). This provides a highly effective cost/performance solution. the MOSFET on, resulting in shoot-through cur

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IRF7807A N-Channel Power MOSFET International Rectifier

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