IRF7807A

N-Channel Power MOSFET

International Rectifier

IRF7807A Features

* IRF7807 IRF7807A Vds 30V 30V Rds(on) 25mΩ 25mΩ Qg 17nC 17nC Qsw 5.2nC Qoss 16.8nC 16.8nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation 25°C 70°C Junction & Storage Temperature Range

IRF7807A General Description

These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair o.

IRF7807A Datasheet (239.99 KB)

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Datasheet Details

Part number:

IRF7807A

Manufacturer:

International Rectifier

File Size:

239.99 KB

Description:

N-channel power mosfet.
PD

* 91747C IRF7807/IRF7807A HEXFET® Chip-Set for DC-DC Converters

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* N Channel Application Specific MOS.

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IRF7807A N-Channel Power MOSFET International Rectifier

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IRF7807A Features

IRF7807A General Description

Datasheet Details

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Description:

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