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IRF7807D2

MOSFET

IRF7807D2 Features

* (Max Values) IRF7807D2 VDS RDS(on) Qg QSW Qoss 30V 25mΩ 14nC 5.2nC 21.6nC Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient

* RθJA Max. 50 Units °C/W www.irf.com 1 11/8/99 IRF7807D2 Electrical Characteristics Parameter Drain-to-Source Breakdown

IRF7807D2 General Description

The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar.

IRF7807D2 Datasheet (134.46 KB)

Preview of IRF7807D2 PDF

Datasheet Details

Part number:

IRF7807D2

Manufacturer:

International Rectifier

File Size:

134.46 KB

Description:

Mosfet.
PD- 93762 IRF7807D2 FETKY™ MOSFET / SCHOTTKY DIODE

* Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode

* Ideal for Synchronou.

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TAGS

IRF7807D2 MOSFET International Rectifier

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