IRF7811A
International Rectifier
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N-channel power mosfet. These new devices employ advanced HEXFET® Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charg
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PD - 93812 PD - 93813
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..
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VDS RDS(on) max
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Qg (typical) ID
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SO-8
S1 S2 S3 G4
AA 8D 7D.
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Bene.
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