Datasheet Specifications
- Part number
- IRF7901D1
- Manufacturer
- International Rectifier
- File Size
- 256.49 KB
- Datasheet
- IRF7901D1_InternationalRectifier.pdf
- Description
- Dual MOSFET
Description
PD- 93844B IRF7901D1 * Co-Pack Dual N-channel HEXFET® Power MOSFET and Schottky Diode * Ideal for Synchronous Buck DC-DC Converters U.Features
* n) vs Gate-to-Source Voltage DS Figure 9. Typical R (on) vs Gate-to-Source Voltage DS 30 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 20 VGS 10V 8.0V 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP 50 40 30 VGS 10V 8.0V 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP 20 0.0V 250µs PUApplications
* Advanced HEXFET®MOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable for a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple die capability makinIRF7901D1 Distributors
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