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IRF7902PBF - HEXFET Power MOSFET

IRF7902PBF Description

www.DataSheet4U.com PD - 97194A IRF7902PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, G.

IRF7902PBF Features

* VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage RDS(on), Drain-to -Source On Resistance (m Ω) 60 ID = 6.4A 50 Fig 16. Typical Source-Drain Diode Forward Voltage RDS(on), Drain-to -Source On Resistance (m Ω) 40 ID = 9

IRF7902PBF Applications

* l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Improved Body Diode Reverse Recovery l Lead-F

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HEXFET Power MOSFET International Rectifier
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