IRF8010PBF - HEXFET Power MOSFET
www.DataSheet4U.com PD - 95505 Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free SMPS MOSFET IRF8010PbF HEXFET® Power MOSFET VDSS 100V RDS(on) max 15mΩ ID 80A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current l Typical RDS(on) = 12mΩ l TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 2
IRF8010PBF Features
* h ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. Coss eff. is a fixed capacitance that gives the same charging time Starting TJ = 25°C, L = 0.31mH, RG = 25Ω, as Coss while VDS is rising from 0 to 80% VDSS. IAS = 45A. Calculated continuous current based on maximum allowable
* ISD ≤ 45
