IRF8513PBF Datasheet - International Rectifier

IRF8513PBF Power MOSFET

The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8513PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. Th.

PD - 96196 www.DataSheet4U.com IRF8513PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% Tested for RG l Lead-Free (Qualified to 260°C Reflow) l RoHS Compliant (Halogen Free) V DSS 30V R DS(on) max Q1 15.5m @VGS = 10V Q2 12.7m @VGS = 10V : : ID 8.0A 11A B .

IRF8513PBF Features

* Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area Fig 12. Maximum Safe Operating Area 4 www.irf.com www.DataSheet4U.com Typical Characteristics Q1 - Control FET 2.0 ID = 8.0A VGS = 10V RDS(on) , Drain-to-Source On Resistance (Normalized) IRF8513

IRF8513PBF Datasheet (375.30 KB)