IRF9Z34NLPBF
International Rectifier
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📁 Related Datasheet
IRF9Z34NL - Power MOSFET
(International Rectifier)
PD - 9.1525
IRF9Z34NS/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z34NS) l Low-profile through-hole (IRF9Z34NL) l 175°C Ope.
IRF9Z34NL - P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤100mΩ(@VGS= -10V; ID= -10A) ·Advanced trench process technology.
IRF9Z34N - Power MOSFET
(International Rectifier)
PD - 9.1485B
IRF9Z34N
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channe.
IRF9Z34N - P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
IRF9Z34N,IIRF9Z34N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.1Ω ·Enhancement mode: ·100% avalanche tes.
IRF9Z34NS - Power MOSFET
(International Rectifier)
PD - 9.1525
IRF9Z34NS/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z34NS) l Low-profile through-hole (IRF9Z34NL) l 175°C Ope.
IRF9Z34NS - P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤100mΩ(@VGS= -10V; ID= -10A) ·Advanced trench process technology.
IRF9Z34NSPBF - MOSFET
(International Rectifier)
Lead-Free
PD- 95769
IRF9Z34NSPbF IRF9Z34NLPbF
.irf.
1 04/25/05
IRF9Z34NS/LPbF
2
.irf.
IRF9Z34NS/LPbF
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3
IRF9Z34NS/L.
IRF9Z34 - Power MOSFET
(International Rectifier)
.
IRF9Z34 - Power MOSFET
(Vishay)
.vishay.
IRF9Z34
Vishay Siliconix
Power MOSFET
TO-220AB
S G
S D G
D P-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qg.
IRF9Z34L - Power MOSFET
(International Rectifier)
PD - 9.913A
IRF9Z34S/L
HEXFET® Power MOSFET
Advanced Process Technology l Surface Mount (IRF9Z34S) l Low-profile through-hole (IRF9Z34L) l 175°C Oper.
