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IRF9Z34NS P-Channel MOSFET

IRF9Z34NS Description

isc P-Channel MOSFET Transistor *.

IRF9Z34NS Features

* Static drain-source on-resistance: RDS(on)≤100mΩ(@VGS= -10V; ID= -10A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF9Z34NS Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -19 PD Total Dissipation @TC=25℃ 68 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Tem

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Datasheet Details

Part number
IRF9Z34NS
Manufacturer
INCHANGE
File Size
249.42 KB
Datasheet
IRF9Z34NS-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
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