IRF9Z34NS - P-Channel MOSFET
IRF9Z34NS Features
* Static drain-source on-resistance: RDS(on)≤100mΩ(@VGS= -10V; ID= -10A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* Fast switching application.
* ABSOLUTE MAX
