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IRF9150 P-Channel MOSFET

IRF9150 Description

isc P-Channel MOSFET Transistor *.
Be designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar.

IRF9150 Features

* Static drain-source on-resistance: RDS(on)≤0.15Ω
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF9150 Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Sour

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Datasheet Details

Part number
IRF9150
Manufacturer
INCHANGE
File Size
241.01 KB
Datasheet
IRF9150-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
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