IRF9150
INCHANGE
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P-channel mosfet.
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IRF9150 - P-Channel Power MOSFET
(Intersil Corporation)
IRF9150
Data Sheet February 1999 File Number
2280.3
-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
This P-Channel enhancement mode silicon gate power.
IRF9130 - P-Channel Power MOSFET
(Samsung semiconductor)
.
IRF9130 - P-Channel Power MOSFET
(Seme LAB)
IRF9130
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
P–CHANNEL POWER MOSFET
.
IRF9130 - P-Channel Power MOSFET
(Intersil Corporation)
IRF9130
Data Sheet February 1999 File Number
2220.3
-12A, -100V, 0.30 Ohm, P-Channel Power MOSFET
These are P-Channel enhancement mode silicon gate p.
IRF9130 - P-Channel Power MOSFET
(International Rectifier)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA)
Product Summary
Part Number
BVDSS
IRF9130
-100V
RDS(on)
ID -.
IRF9130SMD - P-Channel Power MOSFET
(Seme LAB)
IRF9130SMD
MECHANICAL DATA Dimensions in mm (inches)
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1.
IRF9131 - P-Channel Power MOSFET
(Samsung semiconductor)
.
IRF9132 - P-Channel Power MOSFET
(Samsung semiconductor)
.
IRF9133 - P-Channel Power MOSFET
(Samsung semiconductor)
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IRF9140 - P-Channel Power MOSFET
(Seme LAB)
IRF9140
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
P–CHANNEL POWER MOSFET
.
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