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IRF9Z34L Datasheet - International Rectifier

IRF9Z34L Power MOSFET

l D VDSS = -60V RDS(on) = 0.14Ω G S ID = -18A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power.

IRF9Z34L Datasheet (334.68 KB)

Preview of IRF9Z34L PDF

Datasheet Details

Part number:

IRF9Z34L

Manufacturer:

International Rectifier

File Size:

334.68 KB

Description:

Power mosfet.

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IRF9Z34L Power MOSFET International Rectifier

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