IRF9Z34NPbF Datasheet - International Rectifier

IRF9Z34NPbF, Power MOSFET

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated G l Lea.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Details

Part number:

IRF9Z34NPbF

Manufacturer:

International Rectifier

File Size:

249.52 KB

Description:

Power MOSFET

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC =

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IRF9Z34NPbF Power MOSFET International Rectifier

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