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IRF9Z34N

P-Channel MOSFET

IRF9Z34N Features

* Static drain-source on-resistance: RDS(on)≤0.1Ω

* Enhancement mode:

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Combine with the fast switching speed and ruggedized device design,provide the designe

IRF9Z34N General Description


*Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source .

IRF9Z34N Datasheet (237.80 KB)

Preview of IRF9Z34N PDF

Datasheet Details

Part number:

IRF9Z34N

Manufacturer:

INCHANGE

File Size:

237.80 KB

Description:

P-channel mosfet.

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TAGS

IRF9Z34N P-Channel MOSFET INCHANGE

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