IRF9Z34N P-Channel MOSFET

INCHANGE

Description

isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34N *.
Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use i.

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Datasheet Specifications

Part number: IRF9Z34N
Manufacturer: INCHANGE
File Size: 237.80 KB
Datasheet: IRF9Z34N-INCHANGE.pdf
Description: P-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤0.1Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -19 IDM Drain Current-Single Pulsed -68 PD Total Dissipation @TC=25℃ 68 Tj Max. Operating Junction Temperature 175 Tstg Storage

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IRF9Z34N P-Channel MOSFET INCHANGE

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