IRFAE40 Datasheet - International Rectifier

IRFAE40 TRANSISTORS

PD - 90579 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRFAE40   IRFAE40 800V, N-CHANNEL BVDSS 800V RDS(on) 2.0Ω ID 4.8Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode re.

IRFAE40 Features

* n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS =0V, TC = 25°C ID @ VGS = 0V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous

IRFAE40_InternationalRectifier.pdf