IRFAF30 Datasheet - International Rectifier

IRFAF30 N-Channel MOSFET

PD - 90617 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRFAF30   IRFAF30 900V, N-CHANNEL BVDSS 900V RDS(on) 4.0Ω ID 2.0Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode re.

IRFAF30 Features

* n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 0V, TC = 25°C ID @ VGS = 0V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuou

IRFAF30 Datasheet (156.08 KB)