IRFAE50 N-Channel MOSFET

International Rectifier

Description

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRFAE50 800V RDS(on) 1.2 ID 7.1.
HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors.

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Datasheet Specifications

Part number: IRFAE50
Manufacturer: International Rectifier
File Size: 846.58 KB
Datasheet: IRFAE50_InternationalRectifier.pdf
Description: N-Channel MOSFET

Features

* Repetitive Avalanche Ratings
* Dynamic dv/dt Rating
* Hermetically Sealed
* Simple Drive Requirements Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drai

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IRFAE50 N-Channel MOSFET International Rectifier

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