IRFAE50

N-Channel MOSFET

International Rectifier

IRFAE50 Features

* Repetitive Avalanche Ratings

* Dynamic dv/dt Rating

* Hermetically Sealed

* Simple Drive Requirements Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drai

IRFAE50 General Description

HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv.

IRFAE50 Datasheet (846.58 KB)

IRFAE50 Datasheet Preview — Preview of IRFAE50 PDF

Datasheet Details

Part number:

IRFAE50

Manufacturer:

International Rectifier

File Size:

846.58 KB

Description:

N-channel mosfet.
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRFAE50 800V RDS(on) 1.2 ID 7.1.

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IRFAE50 N-Channel MOSFET International Rectifier

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IRFAE50 Features

IRFAE50 General Description

Datasheet Details

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