IRFAG50 - N-Channel MOSFET

International Rectifier

Datasheet Details

Part number	IRFAG50
Manufacturer	International Rectifier
File Size	0.99 MB
Description	N-Channel MOSFET
Datasheet	IRFAG50_InternationalRectifier.pdf

HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors.

Repetitive Avalanche Ratings.
Dynamic dv/dt Rating.
Hermetically Sealed.
Simple Drive Requirements Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche En.

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Published: Oct 6, 2005 |