IRFAG50 Datasheet - International Rectifier

IRFAG50 N-Channel MOSFET

HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv.

IRFAG50 Features

* Repetitive Avalanche Ratings

* Dynamic dv/dt Rating

* Hermetically Sealed

* Simple Drive Requirements Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drai

IRFAG50 Datasheet (0.99 MB)