IRFB3507 Datasheet (International Rectifier) - (IRFx3507) HEXFET Power MOSFET

IRFB3507, (IRFx3507) HEXFET Power MOSFET

www.DataSheet4U.com PD - 96903A IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G S HEXFET® Power MOSFET D VDSS RDS(on) typ.

max.

ID 75V 7.0m: 8.8m: 97A G DS TO-220AB IRFB3507 G

IRFB3507 Features

* voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav

* f ZthJC(D, tav) =