IRFB4610PBF - HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRFB4610PBF
Manufacturer	International Rectifier
File Size	419.77 KB
Description	HEXFET Power MOSFET
Datasheet	IRFB4610PBF_InternationalRectifier.pdf

d breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3.
BV.
Iav) = DT/ ZthJC Iav = 2DT/ [1.3.
BV.
Zth] EAS (AR) = PD (ave).
tav Starting TJ , Junction Temperat.

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Published: May 30, 2007 |