IRFB4620PbF Datasheet - International Rectifier

IRFB4620PbF HEXFET Power MOSFET

PD -96172 IRFB4620PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free TO-220AB IRFB4620PbF D G S VDSS RDS(on) typ. max. ID 200V 60m: 72.5m: 25A G D S Gate Drain Source A.

IRFB4620PbF Features

* ) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = A

IRFB4620PbF-InternationalRectifier.pdf