Datasheet Details
Part number:
IRFB4615PBF
Manufacturer:
International Rectifier
File Size:
329.07 KB
Description:
N-Channel HEXFET Power MOSFET
Features
* . 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase durinApplications
* l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dtIRFB4615PBF_InternationalRectifier.pdf
Datasheet Details
Part number:
IRFB4615PBF
Manufacturer:
International Rectifier
File Size:
329.07 KB
Description:
N-Channel HEXFET Power MOSFET
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