IRFB4615PBF Datasheet - International Rectifier

IRFB4615PBF N-Channel HEXFET Power MOSFET

PD -96171 IRFB4615PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free TO-220AB IRFB4615PbF D G S VDSS RDS(on) typ. max. ID 150V 32m: 39m: 35A G D S Gate Drain Source Abs.

IRFB4615PBF Features

* . 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase durin

IRFB4615PBF Datasheet (329.07 KB)