IRFH7084TRPbF, IRFH7084PbF Datasheet - International Rectifier

IRFH7084TRPbF - HEXFET Power MOSFET

StrongIRFET™ IRFH7084PbF Application Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies DC/DC converters DC/AC Inverters HEXFET® Power MOSFET VDSS RDS(on) typ. max 40V 0.95m 1.25m 265A 100A ID (Silicon Limited) ID (Package Limited) Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability

IRFH7084TRPbF Features

* che pulsewidth, tav, assuming  j = 25°C and Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs. Pulse width 200 180 EAR , Avalanche Energy (mJ) 160 140 120 100 80 60 40 20 0 25 50 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 100A

IRFH7084PbF-InternationalRectifier.pdf