Description
StrongIRFET™ IRFH7084PbF Application * Half-bridge and full-bridge topologies * Synchronous rectifier applications * Resonant mode power s.
Features
* che pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs. Pulse width
200 180
EAR , Avalanche Energy (mJ)
160 140 120 100 80 60 40 20 0 25 50
TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 100A
Applications
* Resonant mode power supplies
* DC/DC converters
* DC/AC Inverters HEXFET® Power MOSFET VDSS RDS(on) typ. max
40V 0.95m 1.25m 265A 100A
ID (Silicon Limited) ID (Package Limited) Benefits
* Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
* Fully Characterized Capacita