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IRFH7085PBF Power MOSFET

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Description

Application * Half-bridge and full-bridge topologies * Synchronous rectifier applications * Resonant mode power supplies * DC/DC c.

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Features

* SPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-005 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) 0.1 1 Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj =

Applications

*  Resonant mode power supplies
*  DC/DC converters
*  DC/AC Inverters   Benefits
*  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
*  Fully Characterized Capacitance and Avalanche SOA
*  Enhanced body diode dV/dt and dI/dt Capability
*  Lead-Free, RoHS Compliant

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