IRFH7085PBF Datasheet - International Rectifier

IRFH7085PBF Power MOSFET

Application  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  DC/DC converters  DC/AC Inverters Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant StrongIRFET™ IRFH7085PbF HEXFET® Power MOSFET VDSS RDS(on) typ. max ID (Silicon Limited) ID (Pac.

IRFH7085PBF Features

* SPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-005 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) 0.1 1 Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj =

IRFH7085PBF-InternationalRectifier.pdf