Application Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies DC/DC converters DC/AC Inverters Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant StrongIRFET™ IRFH7085PbF HEXFET® Power MOSFET VDSS RDS(on) typ.
max ID (Silicon Limited) ID (Pac
IRFH7085PBF Features
* SPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-005 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) 0.1 1 Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj =
IRFH7085PBF-InternationalRectifier.pdf
Datasheet Details
IRFH7085PBF
International Rectifier
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Power mosfet.
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