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IRFH8201PBF - Power MOSFET

IRFH8201PBF Description

VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 0.95 1.60 56 100 V m nC A   Applications *OR-ing.
Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component.

IRFH8201PBF Features

* Low RDSon (

IRFH8201PBF Applications

* OR-ing MOSFET for 12V (typical) Bus in-Rush Current

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