IRFI9520N Datasheet - International Rectifier

IRFI9520N, Power MOSFET

PRELIMINARY l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist.= 4.8mm l P-Channel .
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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IRFI9520N-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFI9520N

Manufacturer:

International Rectifier

File Size:

98.62 KB

Description:

Power MOSFET

Features

* IME N S IO N IN G & TO LE R A N C IN G P ER A NSI Y 14.5M , 1982 2 C O N TR O LLIN G D IM E N S IO N : IN C H . C D 3X 1.40 (.055) 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) Part Marking Information TO-220 Fullpak M AM B 3X 0.48 (.019) 0.44 (.017) 2.85 (.112) 2.65 (

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mi

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IRFI9520N Power MOSFET International Rectifier

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