IRFI9520N Datasheet (International Rectifier)

IRFI9520N, Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer

IRFI9520N Features

* IME N S IO N IN G & TO LE R A N C IN G P ER A NSI Y 14.5M , 1982 2 C O N TR O LLIN G D IM E N S IO N : IN C H . C D 3X 1.40 (.055) 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) Part Marking Information TO-220 Fullpak M AM B 3X 0.48 (.019) 0.44 (.017) 2.85 (.112) 2.65 (