Datasheet Details
- Part number
- IRFI9520N
- Manufacturer
- International Rectifier
- File Size
- 98.62 KB
- Datasheet
- IRFI9520N-InternationalRectifier.pdf
- Description
- Power MOSFET
IRFI9520N Description
PRELIMINARY l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist.= 4.8mm l P-Channel .
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFI9520N Features
* IME N S IO N IN G & TO LE R A N C IN G P ER A NSI Y 14.5M , 1982
2 C O N TR O LLIN G D IM E N S IO N : IN C H . C D
3X
1.40 (.055) 1.05 (.042)
2.54 (.100) 2X
0.90 (.035) 3X 0.70 (.028)
0.25 (.010)
Part Marking Information
TO-220 Fullpak
M AM B
3X
0.48 (.019) 0.44 (.017)
2.85 (.112) 2.65 (
IRFI9520N Applications
* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mi
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