IRFI9Z24N Datasheet - International Rectifier

Power MOSFET

IRFI9Z24N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer.

IRFI9Z24N Datasheet (124.57 KB)

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IRFI9Z24N

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International Rectifier

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124.57 KB

Description:

Power mosfet.
l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l P-Channel G l Ful.

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IRFI9Z24N Power MOSFET International Rectifier

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IRFI9Z24N General Description

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