IRFI9Z24N Datasheet - International Rectifier

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IRFI9Z24N Power MOSFET

l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist.= 4.8mm l P-Channel G l Ful.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRFI9Z24N-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFI9Z24N

Manufacturer:

International Rectifier

File Size:

124.57 KB

Description:

Power MOSFET

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mi

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IRFI9Z24N Power MOSFET International Rectifier

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