* SuperFast body diode eliminates the need for external diodes in ZVS applications.
* Lower Gate charge results in simpler drive requirements.
* Enhanced dv/dt capabilities offer improved ruggedness.
* Higher Gate voltage threshold offers improved noise immunity. TO-
IRFIB7N50LPbF Datasheet (219.98 KB)
IRFIB7N50LPbF
International Rectifier
219.98 KB
Power mosfet.
PD - 95750 IRFIB7N50LPbF SMPS MOSFET HEXFET® Power MOSFET Applications Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID .
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