Datasheet4U Logo Datasheet4U.com

IRFP4668PBF

HEXFET Power MOSFET

IRFP4668PBF Features

* 2b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14

IRFP4668PBF Datasheet (323.67 KB)

Preview of IRFP4668PBF PDF

Datasheet Details

Part number:

IRFP4668PBF

Manufacturer:

International Rectifier

File Size:

323.67 KB

Description:

Hexfet power mosfet.
PD -97140 IRFP4668PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Spe.

📁 Related Datasheet

IRFP4668 N-Channel MOSFET (INCHANGE)

IRFP460 N-Channel MOSFET Transistor (Inchange Semiconductor)

IRFP460 Power MOSFET (Fairchild Semiconductor)

IRFP460 Power MOSFET (International Rectifier)

IRFP460 N-Channel Power MOSFET (Intersil Corporation)

IRFP460 N-Channel Power MOSFET (ST Microelectronics)

IRFP460 PowerMOS transistor (NXP)

IRFP460 Power MOSFET (Vishay)

IRFP460A Power MOSFET (International Rectifier)

IRFP460A Power MOSFET (Vishay Siliconix)

TAGS

IRFP4668PBF HEXFET Power MOSFET International Rectifier

Image Gallery

IRFP4668PBF Datasheet Preview Page 2 IRFP4668PBF Datasheet Preview Page 3

IRFP4668PBF Distributor