IRFP4668PBF Datasheet - International Rectifier

IRFP4668PBF HEXFET Power MOSFET

PD -97140 IRFP4668PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D VDSS RDS(on) typ. 200V 8.0m: max. 9.7m: 130A S ID D G D S TO-247AC G D S Gate Drain Source Ab.

IRFP4668PBF Features

* 2b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14

IRFP4668PBF Datasheet (323.67 KB)