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IRFR120ZPBF Power MOSFET

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Description

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This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

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Applications

* PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 190mΩ ID = 8.7A S D-Pak I-Pak IRFR120ZPbF IRFU120ZPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ ID @ TC = 100°C Continuous Drain Current, VGS @ 10

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