Description
l
HEXFET® Power MOSFET
D
VDSS = 55V
G S
RDS(on) = 0.016Ω ID = 56A
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The D-Pak is designed
Features
- PLE: T HIS IS AN IRF R120 WIT H AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in ass embly line position indicates "Lead-F ree" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
IRFU120 12 916A 34
AS S EMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A
OR
PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
IRF U120 12 34
DAT E CODE P = DES IGNAT ES LEAD-F REE.