IRG4BC30K-SPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRG4BC30K-SPBF
Manufacturer	International Rectifier
File Size	289.26 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC30K-SPBF_InternationalRectifier.pdf

High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel Benefits As a Freewheeling Diode we recommend our.

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Published: Sep 28, 2007 |