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IRG4BC30KD-S

INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC30KD-S Features

* High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V

* Combines low conduction losses with high switching speed

* tighter parameter distribution and higher efficiency than previous generations

* IGBT co-packaged

IRG4BC30KD-S Datasheet (225.24 KB)

Preview of IRG4BC30KD-S PDF

Datasheet Details

Part number:

IRG4BC30KD-S

Manufacturer:

International Rectifier

File Size:

225.24 KB

Description:

Insulated gate bipolar transistor.

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TAGS

IRG4BC30KD-S INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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