IRG4MC30F Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

INSULATED GATE BIPOLAR TRANSISTOR PD-94313D IRG4MC30F Fast Speed IGBT .

📥 Download Datasheet

IRG4MC30F Datasheet Preview — Preview of IRG4MC30F PDF

Datasheet Specifications

Part number: IRG4MC30F
Manufacturer: International Rectifier
File Size: 188.76 KB
Datasheet: IRG4MC30F_InternationalRectifier.pdf
Description: Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR

Features

* C
* Electrically Isolated and Hermetically Sealed
* Simple Drive Requirements
* Latch-proof
* Fast Speed Operation 3 kHz - 8 kHz
* High Operating Frequency
* Switching-loss Rating includes all "tail" losses
* Ceramic Eyelets G E n-channel B

Applications

* VCES = 600V VCE(on) max =1.7V @VGE = 15V, IC = 15A TO-254AA Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector

IRG4MC30F Distributors

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IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRG4MC30F-like datasheet