IRG4MC50F - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRG4MC50F
Manufacturer	International Rectifier
File Size	285.20 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4MC50F_InternationalRectifier.pdf

Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses Ceramic eyelets C Fast Speed IGBT VCES = 600V G E VCE(on) max = 2.0V @VGE = 15V, IC = 30A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

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Published: Oct 19, 2006 |