IRG4ZH70UD
International Rectifier
267.04kb
Insulated gate bipolar transistor.
TAGS
📁 Related Datasheet
IRG4ZH71KD - Surface Mountable Short Circuit Rated UltraFast IGBT
(International Rectifier)
..
PD - 91729
PRELIMINARY
IRG4ZH71KD
Surface Mountable Short Circuit Rated UltraFast IGBT
C
INSULATED GATE BIPOLAR TRANSISTOR WITH.
IRG4ZH50KD - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD - 9.1680
IRG4ZH50KD
Surface Mountable Short INSULATED GATE BIPOLAR TRANSISTOR WITH Circuit Rated UltraFast IGBT ULTRAFAST SOF.
IRG4ZC70UD - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD -9.1668A
IRG4ZC70UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
q q
Surface Mountable Ultr.
IRG41BC10UDPBF - Insulated Gate Bipolar Transistor
(International Rectifier)
PD - 95603
IRG4IBC10UDPbF
• Lead-Free
.irf.
1
7/28/04 ..
..
..
IRG4IBC10UDPbF
2
..
IRG41BC30UD - Ultra Fast CoPack IGBT
(International Rectifier)
PD91753A
IRG4IBC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• 2.5kV, 60s insulation voltage U • 4.8 mm creapag.
IRG4BC10K - Short Circuit Rated UltraFast IGBT
(International Rectifier)
..
PD - 91733A
IRG4BC10K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short Circuit Rated UltraFast: Optimized for high operating f.
IRG4BC10KD - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD -91734B
IRG4BC10KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating .
IRG4BC10KDPBF - HEXFET Power MOSFET
(International Rectifier)
PD -94903
IRG4BC10KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
C
Short Circuit Rated UltraFast IGBT
VCES = 60.
IRG4BC10S - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD - 91786A
IRG4BC10S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Min.
IRG4BC10SD-L - (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
..
PD - 94255
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Extremely low voltage drop 1.1Vtyp. @.