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IRHNA58160, IRHNA53160 RADIATION HARDENED POWER MOSFET

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Description

www.DataSheet4U.com PD - 91860H RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57160 100K Ra.

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This datasheet PDF includes multiple part numbers: IRHNA58160, IRHNA53160. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRHNA58160, IRHNA53160
Manufacturer
International Rectifier
File Size
328.21 KB
Datasheet
IRHNA53160_InternationalRectifier.pdf
Description
RADIATION HARDENED POWER MOSFET
Note
This datasheet PDF includes multiple part numbers: IRHNA58160, IRHNA53160.
Please refer to the document for exact specifications by model.

Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD

Applications

* These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain a

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