IRHNA58260 Datasheet - International Rectifier

IRHNA58260 N-CHANNEL POWER MOSFET

www.DataSheet4U.com PD - 91838C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57260 100K Rads (Si) IRHNA53260 300K Rads (Si) IRHNA54260 600K Rads (Si) IRHNA58260 1000K Rads (Si) RDS(on) 0.038Ω 0.038Ω 0.038Ω 0.043Ω ID 55A 55A 55A 55A IRHNA57260 200V, N-CHANNEL R5 TECHNOLOGY SMD-2 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Singl.

IRHNA58260 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V,

IRHNA58260 Datasheet (255.41 KB)