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IRHNA8160

N-CHANNEL TRANSISTOR

IRHNA8160 Features

* n n n n n n n n n n n n n Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating

IRHNA8160 Datasheet (242.20 KB)

Preview of IRHNA8160 PDF

Datasheet Details

Part number:

IRHNA8160

Manufacturer:

International Rectifier

File Size:

242.20 KB

Description:

N-channel transistor.
www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1396 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRA.

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IRHNA8160 N-CHANNEL TRANSISTOR International Rectifier

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