IRHNA8260 Datasheet - International Rectifier

IRHNA8260 N-CHANNEL TRANSISTOR

www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1397 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHNA7260 IRHNA8260 N-CHANNEL MEGA RAD HARD 200 Volt, 0.070Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications.

IRHNA8260 Features

* n n n n n n n n n n n n n Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating

IRHNA8260 Datasheet (242.28 KB)