IRHNA9160 Datasheet (International Rectifier)

IRHNA9160, P-CHANNEL TRANSISTOR

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PD-9.1433 REPETITIVE AVALANCHE AND dv/dt RATED IRHNA9160 P-CHANNEL HEXFET ® TRANSISTOR RAD HARD -100Volt, 0.087Ω, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 rads (Si).

Under identical pre- and post-radiation test conditions, International Recti

IRHNA9160 Features

* s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating