IRHNA9160 Datasheet - International Rectifier

IRHNA9160 P-CHANNEL TRANSISTOR

www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1433 REPETITIVE AVALANCHE AND dv/dt RATED IRHNA9160 P-CHANNEL HEXFET ® TRANSISTOR RAD HARD -100Volt, 0.087Ω, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 rads (Si). Under identical pre- and post-radiation test conditions, International Recti.

IRHNA9160 Features

* s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating

IRHNA9160 Datasheet (233.17 KB)