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IRHNA9260 RADIATION HARDENED POWER MOSFET

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Description

www.DataSheet4U.com PD - 93969 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA9260 100K Rads.

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Datasheet Specifications

Part number
IRHNA9260
Manufacturer
International Rectifier
File Size
265.95 KB
Datasheet
IRHNA9260_InternationalRectifier.pdf
Description
RADIATION HARDENED POWER MOSFET

Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V

Applications

* This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as

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