IRHNA93260 Datasheet - International Rectifier

IRHNA93260 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD - 93969 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA9260 100K Rads (Si) IRHNA93260 300K Rads (Si) RDS(on) 0.154Ω 0.154Ω ID -29A -29A IRHNA9260 JANSR2N7426U 200V, P-CHANNEL REF: MIL-PRF-19500/655 RAD-Hard ™ HEXFET TECHNOLOGY ® QPL Part Number JANSR2N7426U JANSF2N7426U SMD-2 International Rectifier’s RAD-Hard MOSFET technology provides high performance power MOSFETs for space applications. This technology has .

IRHNA93260 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V

IRHNA93260 Datasheet (265.95 KB)