IRHNJ58130 Datasheet - International Rectifier

IRHNJ58130 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD - 93754E RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) IRHNJ54130 600K Rads (Si) IRHNJ58130 RDS(on) 0.06 Ω 0.06 Ω 0.06 Ω ID 22A 22A 22A 22A QPL Part Number JANSR2N7481U3 JANSF2N7481U3 JANSG2N7481U3 JANSH2N7481U3 IRHNJ57130 JANSR2N7481U3 100V, N-CHANNEL REF: MIL-PRF-19500/703 TECHNOLOGY 4 # c 1000K Rads (Si) 0.075 Ω SMD-0.5 International Rec.

IRHNJ58130 Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD

IRHNJ58130 Datasheet (276.59 KB)