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IRHNJ58130

RADIATION HARDENED POWER MOSFET

IRHNJ58130 Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD

IRHNJ58130 Datasheet (276.59 KB)

Preview of IRHNJ58130 PDF

Datasheet Details

Part number:

IRHNJ58130

Manufacturer:

International Rectifier

File Size:

276.59 KB

Description:

Radiation hardened power mosfet.
www.DataSheet4U.com PD - 93754E RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ57130 100K .

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IRHNJ58130 RADIATION HARDENED POWER MOSFET International Rectifier

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