IRHNJ58230, IRHNJ53230 Datasheet - International Rectifier

IRHNJ58230, IRHNJ53230, RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD - 93753A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ57230 100K

Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V,

Applications

* These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all

IRHNJ53230_InternationalRectifier.pdf