IRHNJ58230 Datasheet - International Rectifier

IRHNJ58230 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD - 93753A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ57230 100K Rads (Si) IRHNJ53230 300K Rads (Si) IRHNJ54230 600K Rads (Si) IRHNJ58230 1000K Rads (Si) RDS(on) 0.20Ω 0.20Ω 0.20Ω 0.25Ω ID 13A 13A 13A 13A IRHNJ57230 200V, N-CHANNEL 4 # TECHNOLOGY c SMD-0.5 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Sin.

IRHNJ58230 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V,

IRHNJ58230 Datasheet (273.16 KB)