IRHNJ58Z30 Datasheet - International Rectifier

IRHNJ58Z30 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD - 93751B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ57Z30 100K Rads (Si) IRHNJ53Z30 IRHNJ54Z30 300K Rads (Si) 600K Rads (Si) RDS(on) 0.020Ω 0.020Ω 0.020Ω 0.025Ω ID 22A 22A 22A 22A IRHNJ57Z30 30V, N-CHANNEL 4 # TECHNOLOGY c IRHNJ58Z30 1000K Rads (Si) SMD-0.5 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have b.

IRHNJ58Z30 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V,

IRHNJ58Z30 Datasheet (262.19 KB)