* n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V,
IRHNJ58Z30 Datasheet (262.19 KB)
IRHNJ58Z30
International Rectifier
262.19 KB
Radiation hardened power mosfet.
www.DataSheet4U.com
PD - 93751B
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level IRHNJ57Z30 100K .
📁 Related Datasheet
IRHNJ58034 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHNJ58130 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHNJ58230 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHNJ53034 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHNJ53130 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHNJ53230 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHNJ53Z30 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHNJ54034 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHNJ54130 RADIATION HARDENED POWER MOSFET (International Rectifier)
IRHNJ54230 RADIATION HARDENED POWER MOSFET (International Rectifier)
